產(chǎn)品分類
SiC高溫氧化設備
所屬分類:
第三代半導體工藝設備
概要:
專用于硅-碳化合物(SiC)氧化處理,可實現(xiàn)SiC片高溫環(huán)境下完成高溫氧化工藝。氧化工藝使用O2,O2/H2,N2O,NO是最安全的毒性氣體氧化爐,設備適用于SiC基功率器件制造中的高溫氧化工藝環(huán)節(jié),加熱腔與工藝腔獨立密閉設計,提供工藝腔的潔凈度。
關鍵詞:
MPCVD
SiC高溫氧化設備
產(chǎn)品概述/Product Introduction:
♦專用于硅-碳化合物(SiC)氧化處理,可實現(xiàn)SiC片高溫環(huán)境下完成高溫氧化工藝。氧化工藝使用O2,O2/H2,N2O,NO是最安全的毒性氣體氧化爐
Specially used for oxidation treatment of silicon-carbon compounds (SiC), which can realize the high-temperature oxidaton process of SiC sheets in high-temperature environment.The oxidation process uses O2, O2/H2, N2O, NO, which is thesafest oxidizing furnace for toxic gas.
♦設備適用于SiC基功率器件制造中的高溫氧化工藝環(huán)節(jié)
The equipment is suitable for the high temperature oxidation process in the manufacture of SiC-based power devices
♦加熱腔與工藝腔獨立密閉設計,提供工藝腔的潔凈度
The heating chamber and the process chamber are designed independently and sealed to provide the cleanliness of the process chamber
技術指標/Technical Indicators:
晶片尺寸:6/8英寸 Wafer size: 6/8 inches |
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制程溫度范圍: 800-2000 °C Process temperature range: 800-2000°C |
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批次片數(shù): 50-100片 Batch capacity: 50-100 pcs |
產(chǎn)品特點/ Product characteristics:
♦ 采用立式結構、工藝控制好、溫度分布均勻、氣流穩(wěn)定
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
Robot自動傳送
Robot Auto Transfer (Optional)
♦ 多點控溫,溫度均勻
Multi-point temperature control, uniform temperature
♦ 具有多種報警功能及安全保護功能
Has various alarm functions and safety protection functions
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