產(chǎn)品分類
液相法長晶爐
所屬分類:
液相法長晶爐
概要:
液相法可以在更低的溫度(<2000℃)以下實(shí)現(xiàn)SiC單晶的生長,理論上更容易獲得高質(zhì)量的單晶。利用溫度梯度作為生長驅(qū)動力來實(shí)現(xiàn)晶體的生長。
關(guān)鍵詞:
液相法長晶爐
液相法長晶爐
產(chǎn)品概述/Product Introduction:
本設(shè)備主要用于碳化硅(SiC)單晶生長。液相法可以在更低的溫度(<2000℃)以下實(shí)現(xiàn)SiC單晶的生長,理論上更容易獲得高質(zhì)量的單晶。利用溫度梯度作為生長驅(qū)動力來實(shí)現(xiàn)晶體的生長。
This equipment is mainly used for the single crystal growth of siliconcarbide(SiC) .LPE method enables the growth of SiC single crystals below much lower temperatures (<2000°C), which theoretically makes it easier to obtain high-quality single crystals. The temperature gradient is utilized as a growth driver to achieve crystal growth.
產(chǎn)品特點(diǎn)/Product Characteristics:
♦ 晶體尺寸:6/8英寸
Crystal size: 6/8 inches
♦ 溫度范圍:溫度1500-2100℃
Temperature range: 1500-2100 ℃
♦ 真空度:1*10-3pa
Vacuum Pressure: 1 * 10-3pa
♦ 提拉/坩堝桿:升降0.2-400mm/h,旋轉(zhuǎn)0.5-50rpm
Lift/crucible lever: lift rate 0.2-400mm/h, rotation rate 0.5-50rpm
♦ 稱重:6kg 精度:0.01g
Weighing: 6kg, accuracy 0.01g
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