產(chǎn)品分類
SiC高溫退火爐
所屬分類:
氧化/擴(kuò)散/退火
概要:
專門用于碳化硅(SiC)氮化鎵(GaN)器件的離子注入后退火工藝,采用特殊的無金屬加熱設(shè)計(jì)使加工溫度提高到2000℃。 適用工藝:SiC和GaN晶圓的退火
關(guān)鍵詞:
SiC高溫退火爐
SiC高溫退火爐
產(chǎn)品概述/Product Introduction:
♦ 專門用于碳化硅(SiC)氮化鎵(GaN)器件的離子注入后退火工藝,采用特殊的無金屬加熱設(shè)計(jì)使加工溫度提高到2000℃。
Specially used for ion implantation annealing process of silicon carbide (SiC) and gallium nitride (GaN) devices, with a special non-metallic heating design to increase the processing temperature to 2000 ℃.
♦ 適用工藝:SiC和GaN晶圓的退火
Applicable process: Annealing of SiC and GaN wafers
產(chǎn)品特點(diǎn)/Product Characteristics:
♦ 采用立式結(jié)構(gòu)、工藝控制好、溫度分布均勻、氣流穩(wěn)定
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot自動傳送
Robot Auto Transfer
♦ 多點(diǎn)控溫,溫度均勻
Multi-point temperature control, uniform temperature
♦ 具有多種報(bào)警功能及安全保護(hù)功能
Has various alarm functions and safety protection functions
技術(shù)指標(biāo)/Technical Indicators:
♦ 晶片尺寸:6-8英寸 Wafer size: 6-8 inches
♦ 制程溫度范圍: 800-2000 °C Process temperature range: 800-2000°C
♦ 批次片數(shù): 50-75片 Batch capacity: 50-75 pcs
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